Transition from Sublimation to Growth in Thermal Smoothing and Roughening of GaAs Surfaces

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Abstract

Earlier a technique was developed for thermal GaAs smoothing by annealing in the presence of Ga and As vapors. The vapors were provided in a narrow gap between two GaAs samples, or by annealing in a closed container with a Ga-As melt. At annealing temperatures up to 650°C this technique yielded step-terraced GaAs surfaces. At increased temperatures, the transition from smoothing to kinetic-driven roughening was observed. This roughening revealed itself in the formation of islands (for sublimation) and holes (for growth) of multilayer height and depth. They are formed as a result of step motion through surface areas, where the sublimation and growth did not occur. These spots also act as step stopping centers and lead to step bunching. In this paper we present the results of additional experiments which clarify the reasons of the transition from sublimation to growth (i.e. from islands to holes) in the surface roughening at elevated temperatures. The thermal smoothing technique is further developed to reduce the role of surface roughening. This development allowed us to increase the GaAs smoothing temperature up to 775°C.

Original languageEnglish
Title of host publicationProceedings of the 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials, EDM 2022
PublisherIEEE Computer Society
Pages25-28
Number of pages4
ISBN (Electronic)9781665498043
DOIs
Publication statusPublished - 2022
Event23rd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2022 - Altai, Russian Federation
Duration: 30 Jun 20224 Jul 2022

Publication series

NameInternational Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
Volume2022-June
ISSN (Print)2325-4173
ISSN (Electronic)2325-419X

Conference

Conference23rd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2022
Country/TerritoryRussian Federation
CityAltai
Period30.06.202204.07.2022

Keywords

  • GaAs
  • kinetic instabilities
  • step bunching
  • surface roughening
  • surface smoothing

OECD FOS+WOS

  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY

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