Topology of PbSnTe:In Layers Versus Indium Concentration

D. V. Ishchenko; A. N. Akimov; I. O. Akhundov; V. A. Golyashov; A. E. Klimov; A. B. Loginov; B. A. Loginov; N. S. Pashchin; A. S. Tarasov; E. V. Fedosenko; V. N. Sherstyakova

doi:10.1134/S1063784221060086

Topology of PbSnTe:In Layers Versus Indium Concentration

D. V. Ishchenko, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, A. E. Klimov, A. B. Loginov, B. A. Loginov, N. S. Pashchin, A. S. Tarasov, E. V. Fedosenko, V. N. Sherstyakova

General Physics Section

Research output: Contribution to journal › Article › peer-review

Abstract

The surface topology of epitaxial films of lead tin telluride solid solution (including with In additive, Pb_{1 –}_xSn_xTe:In) has been examined using atomic force microscopy. The films have been grown on BaF₂(111) single-crystal substrates and on a CaF₂/BaF₂ buffer layer covering a Si(111) wafer. It has been shown that the relief statistical parameters depend on film growth conditions and the incorporation mechanism of indium, an excess amount of which has been detected on the surface by ex situ XPS.

Original language	English
Pages (from-to)	878-882
Number of pages	5
Journal	Technical Physics
Volume	66
Issue number	7
DOIs	https://doi.org/10.1134/S1063784221060086
Publication status	Published - Jul 2021

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1.03 PHYSICAL SCIENCES AND ASTRONOMY

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@article{d538838bd0194864b82ff960cee381e5,

title = "Topology of PbSnTe:In Layers Versus Indium Concentration",

abstract = "The surface topology of epitaxial films of lead tin telluride solid solution (including with In additive, Pb1 –xSnxTe:In) has been examined using atomic force microscopy. The films have been grown on BaF2(111) single-crystal substrates and on a CaF2/BaF2 buffer layer covering a Si(111) wafer. It has been shown that the relief statistical parameters depend on film growth conditions and the incorporation mechanism of indium, an excess amount of which has been detected on the surface by ex situ XPS.",

author = "Ishchenko, {D. V.} and Akimov, {A. N.} and Akhundov, {I. O.} and Golyashov, {V. A.} and Klimov, {A. E.} and Loginov, {A. B.} and Loginov, {B. A.} and Pashchin, {N. S.} and Tarasov, {A. S.} and Fedosenko, {E. V.} and Sherstyakova, {V. N.}",

note = "Funding Information: This study was partially supported by the Russian Foundation for Basic Research, grant no. 20-02-00324. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",

year = "2021",

month = jul,

doi = "10.1134/S1063784221060086",

language = "English",

volume = "66",

pages = "878--882",

journal = "Technical Physics",

issn = "1063-7842",

publisher = "PLEIADES PUBLISHING INC",

number = "7",

}

TY - JOUR

T1 - Topology of PbSnTe:In Layers Versus Indium Concentration

AU - Ishchenko, D. V.

AU - Akimov, A. N.

AU - Akhundov, I. O.

AU - Golyashov, V. A.

AU - Klimov, A. E.

AU - Loginov, A. B.

AU - Loginov, B. A.

AU - Pashchin, N. S.

AU - Tarasov, A. S.

AU - Fedosenko, E. V.

AU - Sherstyakova, V. N.

PY - 2021/7

Y1 - 2021/7

N2 - The surface topology of epitaxial films of lead tin telluride solid solution (including with In additive, Pb1 –xSnxTe:In) has been examined using atomic force microscopy. The films have been grown on BaF2(111) single-crystal substrates and on a CaF2/BaF2 buffer layer covering a Si(111) wafer. It has been shown that the relief statistical parameters depend on film growth conditions and the incorporation mechanism of indium, an excess amount of which has been detected on the surface by ex situ XPS.

AB - The surface topology of epitaxial films of lead tin telluride solid solution (including with In additive, Pb1 –xSnxTe:In) has been examined using atomic force microscopy. The films have been grown on BaF2(111) single-crystal substrates and on a CaF2/BaF2 buffer layer covering a Si(111) wafer. It has been shown that the relief statistical parameters depend on film growth conditions and the incorporation mechanism of indium, an excess amount of which has been detected on the surface by ex situ XPS.

UR - http://www.scopus.com/inward/record.url?scp=85124420292&partnerID=8YFLogxK

U2 - 10.1134/S1063784221060086

DO - 10.1134/S1063784221060086

M3 - Article

AN - SCOPUS:85124420292

VL - 66

SP - 878

EP - 882

JO - Technical Physics

JF - Technical Physics

SN - 1063-7842

IS - 7

ER -

Topology of PbSnTe:In Layers Versus Indium Concentration

Abstract

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