Topological insulators based on HgTe

Z. D. Kvon, D. A. Kozlov, E. B. Olshanetsky, G. M. Gusev, N. N. Mikhailov, S. A. Dvoretsky

Research output: Contribution to journalArticlepeer-review

Abstract

The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and diffusion transport, the magnetic breakdown of 2D TIs, and an anomalous temperature dependence of edge-channel resistance. In 3D TIs, a record-setting high mobility (up to 5 * 105 cm2 Vÿ1 sÿ1) of surface two-dimensional Dirac fermions (DFs) has been attained. This enabled determining all the main TI parameters (the bulk gap and the density of DFs on both of its surfaces) and provided information on the phase of the Shubnikov±de Haas oscillations of DFs, which indicates the rigid topological coupling between the fermion spin and momentum. Prospects for further research are discussed in the conclusion.

Original languageEnglish
Pages (from-to)629-647
Number of pages19
JournalPhysics-Uspekhi
Volume63
Issue number7
DOIs
Publication statusPublished - 31 Jul 2020

Keywords

  • Edge state transport
  • Inverted energy spectrum
  • Quantum well
  • Topological insulators
  • SURFACE-STATES
  • EDGE TRANSPORT
  • topological insulators
  • quantum well
  • OSCILLATIONS
  • edge state transport
  • inverted energy spectrum

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