The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes

I. B. Chistokhin, M. S. Aksenov, N. A. Valisheva, D. V. Dmitriev, I. V. Marchishin, A. I. Toropov, K. S. Zhuravlev

Research output: Contribution to journalArticlepeer-review

Abstract

Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10 7 cm –2 , these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.

Original languageEnglish
Pages (from-to)180-184
Number of pages5
JournalTechnical Physics Letters
Volume45
Issue number2
DOIs
Publication statusPublished - 1 Feb 2019

Fingerprint

Dive into the research topics of 'The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes'. Together they form a unique fingerprint.

Cite this