THE DEPOSITION OF GERMANIUM NANOPARTICLES ON HYDROGENATED AMORPHOUS SILICON

Jiri Stuchlik, Vladimir A. Volodin, Alexander A. Shklyaev, The Ha Stuchlikova, Martin Ledinsky, Jan Cermak, Jaroslav Kupcik, Radek Fajgar, Vincent Mortet, Joris More-Chevalier, Petr Ashcheulov, Adam Purkrt, Zdenek Remes

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Abstract

We reveal the mechanism of Ge nanoparticles (NPs) formation on the surface of the hydrogenated amorphous silicon (a-Si:H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on ITO and a on boron doped nanocrystalline diamond (BDD). The coating of Ge NPs on a-Si:H was performed by molecular beam epitaxy (MBE) at temperatures up to 450 degrees C. The Ge NPs were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The nanocrystalline Ge particles are conglomerates of nanocrystals of size 10-15 nm and quantum dots (QDs) with size below 2 nm embedded in amorphous Ge phase. After coating with Ge NPs the a-Si:H thin films show better adhesion on BDD substrates then on ITO substrates.

Original languageEnglish
Title of host publication8TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2016)
PublisherTANGER LTD
Pages133-137
Number of pages5
Publication statusPublished - 2017
Event8th International Conference on Nanomaterials - Research and Application (NANOCON) - Brno, Czech Republic
Duration: 19 Oct 201621 Oct 2016

Conference

Conference8th International Conference on Nanomaterials - Research and Application (NANOCON)
CountryCzech Republic
CityBrno
Period19.10.201621.10.2016

Keywords

  • Ge nanoparticles
  • a-Si:H
  • PECVD
  • MBE
  • NANOCRYSTALLINE THIN-FILMS
  • DIFFRACTION BASED ANALYSIS
  • PHASE FRACTIONS
  • TEXTURE

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