The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films

A. K. Kaveev, D. N. Bondarenko, O. E. Tereshchenko

Research output: Contribution to journalConference articlepeer-review

Abstract

The possibility of epitaxial growth of Pb0.7Sn0.3Te crystalline topological insulator films on the Si(111) surface was shown and epitaxial relations were found. It was shown that, depending on the growth temperature, it is possible to control not only the character of the morphology, but also, to a significant extent, the smoothness of the epitaxial layer surface, which is extremely important for further transport measurements of the films. Analysis of the grown films surface morphology made it possible to establish the average value of the height and lateral size of the terraces and islands forming Pb0.7Sn0.3Te surface.

Original languageEnglish
Article number012086
JournalJournal of Physics: Conference Series
Volume2103
Issue number1
DOIs
Publication statusPublished - 14 Dec 2021
EventInternational Conference PhysicA.SPb/2021 - Saint Petersburg, Russian Federation
Duration: 18 Oct 202122 Oct 2021

OECD FOS+WOS

  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY

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