The DA-pHEMT heterostructures for power microwave transistors

K. S. Zhuravlev, D. Yu Protasov, D. V. Gulyaev, A. K. Bakarov, A. I. Toropov, V. G. Lapin, V. M. Lukashin, A. B. Pashkovskii

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Abstract

The structural, transport and optical properties of DA-pHEMT heterostructures are considered. Despite the high 2DEG density (~4×1012 cm-2), parallel conductance is almost lacking in DA-pHEMT heterostructures: the electron density in the parallel conducting layer does not exceed 11% of the 2DEG density, and the electron mobility is lower than the 2DEG mobility by a factor of more than 2.5. It was determined that the beryllium concentration in the undoped InGaAs QW does not exceed 2×016 cm-3 in spite of the Be segregation from the p+-doped barriers during the epitaxy growth. The results of the development of powerful DA-pHEMT are presented. Transistors with a gate length of 0.4-0.5 μm and a total gate width of 0.8 mm at a frequency of 10 GHz have a gain of more than 9 dB, an output power density of more than 1.6 W/mm, a power added efficiency up to 50%.

Original languageEnglish
Title of host publication2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages3
ISBN (Electronic)9781728107165
DOIs
Publication statusPublished - 1 May 2019
Event2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Guangzhou, China
Duration: 19 May 201922 May 2019

Publication series

Name2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings

Conference

Conference2019 IEEE MTT-S International Wireless Symposium, IWS 2019
CountryChina
CityGuangzhou
Period19.05.201922.05.2019

Keywords

  • 2DEG mobility
  • donor-acceptor doping
  • output power density
  • pHEMT
  • DENSITY
  • FIELD-EFFECT TRANSISTORS

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