The charge trap density evolution in wake-up and fatigue modes of FRAM

Damir R. Islamov, O. M. Orlov, V. A. Gritsenko, G. Ja Krasnikov

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Abstract

We study the transport properties in different modes of FRAM elements based on ferroelectric Hf0.5Zr0.5O2 thin films. The leakage currents in Hf0.5Zr0.5O2 are described by phonon-assisted tunneling between traps. Comparison experimental data with results of the simulations allows us to extract the evaluation of the charge trap density during endurance. A hypothesis about role of oxygen vacancies in fatigue is discussed.

Original languageEnglish
Title of host publicationSEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR
EditorsD Misra, S DeGendt, M Houssa, K Kita, D Landheer
PublisherElectrochemical Society, Inc.
Pages279-281
Number of pages3
Volume80
Edition1
ISBN (Electronic)9781607685395
ISBN (Print)978-1-62332-470-4
DOIs
Publication statusPublished - 1 Jan 2017
Event15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting - National Harbor, United States
Duration: 1 Oct 20175 Oct 2017

Publication series

NameECS Transactions
PublisherELECTROCHEMICAL SOC INC
Volume80
ISSN (Print)1938-5862

Conference

Conference15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period01.10.201705.10.2017

Keywords

  • THIN-FILMS
  • FERROELECTRICITY
  • HF0.5ZR0.5O2
  • TRANSPORT

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