The charge transport mechanism in amorphous boron nitride

Yu N. Novikov, V. A. Gritsenko

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The charge transport mechanism in thick film (~ 100 nm) amorphous boron nitride (a-BN) was studied experimentally and theoretically. Applying the experiments on the injection of minor carriers of n- and p-type silicon, the contribution of electrons and holes to the a-BN conductivity in the Si/BN/Al structure was determined. It was established that electrons and holes contribute to the a-BN conductivity, i.e. the a-BN conductivity is two-band. In a broad range of electric fields and temperatures, the charge transport in a-BN is satisfactorily described in the framework of the multiphonon trap ionization theory with thermal WT = 1.0 eV and optical Wopt = 2.0 eV trap ionization energies, respectively.

Original languageEnglish
Article number120213
Number of pages4
JournalJournal of Non-Crystalline Solids
Publication statusPublished - 15 Sep 2020


  • Amorphous
  • BN
  • Boron nitride
  • Current-voltage characteristics
  • Leakage current
  • Phonon-assisted trap ionization


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