Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

A. G. Zhuravlev, V. L. Alperovich

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °С leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.

Original languageEnglish
Pages (from-to)3-8
Number of pages6
JournalApplied Surface Science
Volume395
DOIs
Publication statusPublished - 15 Feb 2017

Keywords

  • Cesium
  • GaAs surface
  • Photoemission
  • Photon-enhanced thermionic emission
  • Solar energy conversion
  • ENERGY
  • INTERFACE
  • CESIUM

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