Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures

G. N. Kamaev, S. G. Cherkova, A. A. Gismatulin, V. A. Volodin, V. A. Skuratov

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Abstract

In the present study, we experimentally examined the effect of swift Xe ion irradiation of multilayer structures involving ultrathin alternating layers of SiO 2 and amorphous hydrogenated silicon (α-Si:H), and subsequent isochronal anneals of such structures, on their properties. It is shown that the action of swift heavy ions on Si/SiO 2 multilayer structures leads to the formation of Si nanoclusters. In the latter case, the multi-layer structure of the samples was retained, and the ordering of nanoclusters along ion tracks was observed. The irradiation produces nuclei which, during subsequent anneals, facilitate the formation of Si nanocrystals (Si NCs) in the dielectric layer. In the multi-layer metal-oxide-semiconductor (MOS) structures with Si NCs embedded in the dielectric matrix, a phenomenon of bipolar resistive switching was observed. On increasing the number of NC layers, during the on-off process intermediate metastable states were manifested. This observation may prove important for realization of intermediate resistance values (multi-bit data storage) and for the development of additive neuromorphic systems.

Original languageEnglish
Title of host publicationInternational Conference on Micro- and Nano-Electronics 2018
EditorsVladimir F. Lukichev, Konstantin V. Rudenko
PublisherSPIE
Number of pages6
Volume11022
ISBN (Electronic)9781510627093
DOIs
Publication statusPublished - 1 Jan 2019
EventInternational Conference on Micro- and Nano-Electronics 2018, ICMNE 2018 - Zvenigorod, Russian Federation
Duration: 1 Oct 20185 Oct 2018

Publication series

NameProceedings of SPIE
PublisherSPIE-INT SOC OPTICAL ENGINEERING
Volume11022
ISSN (Print)0277-786X

Conference

ConferenceInternational Conference on Micro- and Nano-Electronics 2018, ICMNE 2018
CountryRussian Federation
CityZvenigorod
Period01.10.201805.10.2018

Keywords

  • memristors
  • multilayer structures
  • silicon nanocrystals
  • swift heavy ions
  • IRRADIATION
  • SUPERLATTICE
  • PHOTOLUMINESCENCE
  • SILICON NANOCRYSTALS

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