Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films

N. N. Novikova, V. A. Yakovlev, S. A. Klimin, T. V. Malin, A. M. Gilinsky, K. S. Zhuravlev

Research output: Contribution to journalArticlepeer-review


Abstract: The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.

Original languageEnglish
Pages (from-to)36-39
Number of pages4
JournalOptics and Spectroscopy
Issue number1
Publication statusPublished - 1 Jul 2019


  • aluminum and gallium nitrides
  • reflection and ATR spectroscopy
  • surface polaritons


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