Abstract
Abstract: The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.
Original language | English |
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Pages (from-to) | 36-39 |
Number of pages | 4 |
Journal | Optics and Spectroscopy |
Volume | 127 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Jul 2019 |
Keywords
- aluminum and gallium nitrides
- reflection and ATR spectroscopy
- surface polaritons
- VIBRATIONS