Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods

K. N. Astankova, E. B. Gorokhov, I. A. Azarov, V. A. Volodin, A. V. Latyshev

Research output: Contribution to journalArticlepeer-review

Abstract

Abstract: Composites consisting of Ge nanoclusters embedded in GeO2 matrix were modified by selective removal of the germanium dioxide in deionized water or HF. Thin (up to 200 nm) and thick (300−1500 nm) GeO2{Ge-NCs} heterolayers were studied before and after the etching using Raman spectroscopy, scanning and spectral ellipsometry, scanning electron microscopy. It was found that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the etching of thin GeO2{Ge-NCs} heterolayers. When removal the GeO2 matrix from a thick GeO2{Ge-NCs} heterolayer, released Ge nanoclusters were arranged in a vertically ordered chains.

Original languageEnglish
Pages (from-to)2064-2067
Number of pages4
JournalSemiconductors
Volume53
Issue number16
DOIs
Publication statusPublished - 1 Dec 2019

Keywords

  • ellipsometry
  • nanoclusters
  • porous Ge
  • Raman spectroscopy
  • scanning electron microscopy

Fingerprint

Dive into the research topics of 'Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods'. Together they form a unique fingerprint.

Cite this