Based on thermodynamic simulation on the deposition of condensed phases with the complex composition in the Si–C–N–O–H system in a wide temperature range, using initial gas mixtures of 1,1,3,3-tetramethyldisilazane (HSi(CH3)2)2NH (TMDS), TMDS with a variable mixture of oxygen and nitrogen (O2+xN2), a method is developed to obtain SiCxNyOz:H nanocomposite films by the plasma chemical decomposition of this gas mixture in the temperature range of 373-973 K. By FTIR and energy dispersive X-ray spectroscopy the structure of chemical bonds and the elemental composition of the obtained silicon oxycarbonitride films are studied. The in situ composition of the initial gas phase in PECVD processes is examined by optical emission spectroscopy.
- nanocomposite films
- plasma enhanced chemical vapor deposition
- silicon oxycarbonitride