Step bunching phenomena on Si(0 0 1) surface induced by DC heating during sublimation and Si deposition

E. E. Rodyakina, S. V. Sitnikov, D. I. Rogilo, A. V. Latyshev

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4 Citations (Scopus)


Using in situ ultrahigh vacuum reflection electron microscopy and ex situ atomic force microscopy, we have investigated the influence Si deposition on the step bunching on the Si(0 0 1) surface under direct current (DC) sample heating in 950–1150 °C temperature range. During sublimation time scaling exponents of the average distance between the bunches are about 0.3 for both step-up and step-down DC directions at all temperatures. We have found that the shape of the step bunches becomes straight, and the number of step pairs between the bunches increases at a temperature above 1050 °C for fixed annealing time. We have established that the step bunching rate during step-up DC heating is characterized by 0.24 eV effective activation energy under sublimation conditions. The mean bunch separation changes non-monotonically when net growth rate (R) rises and it decreases as R−1/2 near equilibrium conditions.

Original languageEnglish
Pages (from-to)85-88
Number of pages4
JournalJournal of Crystal Growth
Publication statusPublished - 15 Aug 2019


  • A1. Mass transfer
  • A1. Morphological stability
  • A1.Electromigration
  • A1.Surface processes
  • B2.Semiconducting silicon
  • Morphological stability
  • SI(111)
  • Mass transfer
  • Electromigration
  • Semiconducting silicon
  • Surface processes


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