Sputtering of silicon by atomic and cluster bismuth ions: An influence of projectile nuclearity and specific kinetic energy on the sputter yield

A. Tolstogouzov, P. Mazarov, A. E. Ieshkin, S. F. Belykh, N. G. Korobeishchikov, V. O. Pelenovich, D. J. Fu

Research output: Contribution to journalArticlepeer-review

Abstract

An influence of the specific kinetic energy Esp and nuclearity n of Bin+ (n = 1–4) projectiles on the sputter yield of Si was studied by means of the volume loss method. It was found that the specific sputter yield Ysp exhibited non-additive increase with an increasing of n and Esp values. As a non-additivity k-factor, the slope of the straight line approximating Ysp(n) dependences at the same specific energy was proposed to use. For Bin+ (n = 1–4) projectiles at Esp = 10 keV at−1 the k-factor was equal to 0.41 ± 0.08. In addition, it was ascertained that the efficiency of energy transfer from projectiles to target atoms increased with an increase in the projectile nuclearity, e.g., it was 2.8 times greater for Bi3+ bombarding ions as compared with Bi+ ones.

Original languageEnglish
Article number110188
JournalVacuum
Volume188
DOIs
Publication statusPublished - Jun 2021

Keywords

  • Bismuth
  • Liquid metal alloy ion source (LMAIS)
  • Non-additive sputtering
  • Silicon
  • Sputter yield
  • Volume loss method

OECD FOS+WOS

  • 2.05 MATERIALS ENGINEERING
  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY

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