Spin Relaxation of the Neutral Germanium-Vacancy Center in Diamond

Andrey Komarovskikh; Mikhail Uvarov; Vladimir Nadolinny; Yuri Palyanov

doi:10.1002/pssa.201800193

Spin Relaxation of the Neutral Germanium-Vacancy Center in Diamond

Andrey Komarovskikh, Mikhail Uvarov, Vladimir Nadolinny, Yuri Palyanov

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The germanium-vacancy center in diamond is actively studied because it is promising in various quantum-optical and quantum-informational applications. There is not much information about the paramagnetic neutral germanium-vacancy center (GeV⁰) in triplet spin state. In this work, the spin relaxation of the GeV⁰ is studied by pulse electron paramagnetic resonance (EPR) technique at low temperatures. It is shown that spin-lattice and spin-spin relaxation times for the GeV⁰ are shorter than corresponding times for the neutral silicon-vacancy center. The Orbach mechanism of spin-lattice relaxation dominates for the GeV⁰ center in the temperature range 80–110 K (activation energy E_a = 39(6) meV).

Original language	English
Article number	1800193
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	215
Issue number	22
DOIs	https://doi.org/10.1002/pssa.201800193
Publication status	Published - 21 Nov 2018

Keywords

defect characterization
diamond
electron paramagnetic resonance
spin relaxation
EPR
ENTANGLEMENT

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title = "Spin Relaxation of the Neutral Germanium-Vacancy Center in Diamond",

abstract = "The germanium-vacancy center in diamond is actively studied because it is promising in various quantum-optical and quantum-informational applications. There is not much information about the paramagnetic neutral germanium-vacancy center (GeV0) in triplet spin state. In this work, the spin relaxation of the GeV0 is studied by pulse electron paramagnetic resonance (EPR) technique at low temperatures. It is shown that spin-lattice and spin-spin relaxation times for the GeV0 are shorter than corresponding times for the neutral silicon-vacancy center. The Orbach mechanism of spin-lattice relaxation dominates for the GeV0 center in the temperature range 80–110 K (activation energy Ea = 39(6) meV).",

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AU - Uvarov, Mikhail

AU - Nadolinny, Vladimir

AU - Palyanov, Yuri

PY - 2018/11/21

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