Abstract

The paper demonstrates spectral enhancement of Raman pulses converted from 50-ps pulses from a semiconductor laser. Narrow periodic spikes in the optical spectrum of the laser pulses were eliminated in the Raman pulse spectrum due to the averaging effect of stimulated Raman scattering. Reliable and precise tuning of the repetition rate of the laser pulse train provided by external triggering of a semiconductor source allowed tuning the optical spectrum of Raman pulses in a wide range of 1207-1276 nm. The average Raman pulse power was 350 mW.

Original languageEnglish
Title of host publicationProceedings - International Conference Laser Optics 2020, ICLO 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728152332
DOIs
Publication statusPublished - 2 Nov 2020
Event2020 International Conference Laser Optics, ICLO 2020 - St. Petersburg, Russian Federation
Duration: 2 Nov 20206 Nov 2020

Publication series

NameProceedings - International Conference Laser Optics 2020, ICLO 2020

Conference

Conference2020 International Conference Laser Optics, ICLO 2020
CountryRussian Federation
CitySt. Petersburg
Period02.11.202006.11.2020

Keywords

  • fibre amplifier
  • nonlinear optics
  • Raman oscillator
  • semiconductor pulse laser
  • stimulated Raman scattering

Fingerprint Dive into the research topics of 'Spectral enhancement of ps pulses in phosphor-silicate Raman oscillator'. Together they form a unique fingerprint.

Cite this