Simulation of charge transport in micro and nanoscale FETs with elements having different dielectric properties

A. M. Blokhin, E. A. Kruglova, B. V. Semisalov

Research output: Contribution to journalConference articlepeer-review

Abstract

The hydrodynamical model is used for description of the process of charge transport in semiconductors with a high rate of reliability. It is a set of nonlinear partial differential equations with small parameters and specific conditions at the boundaries of field effect transistors (FETs), which essentially complicates the process of finding its stationary solutions. To overcome these difficulties in the case of FETs with elements having different dielectric properties, a fast pseudospectral method has been developed. This method was used for advanced numerical simulation of charge transport in DG-MOSFET.

Original languageEnglish
Article number012035
Number of pages7
JournalJournal of Physics: Conference Series
Volume993
Issue number1
DOIs
Publication statusPublished - 10 Apr 2018
Event19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Russian Federation
Duration: 27 Nov 20171 Dec 2017

Keywords

  • PARABOLIC BAND TRANSPORT
  • HYDRODYNAMICAL MODEL
  • MOMENT EQUATIONS
  • SEMICONDUCTORS
  • CLOSURE

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