Silicon-Based Nanoheterostructures With Quantum Dots

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Abstract

This review describes recent developments in fabrication of self-assembled Ge/Si quantum dot heterostructures with molecular beam epitaxy, quantum-dot electronic configuration, charge transport, optical, and spin phenomena. We are focusing on the fundamental aspects and device applications of the dots with small (~10.nm) sizes.

Original languageEnglish
Title of host publicationAdvances in Semiconductor Nanostructures
Subtitle of host publicationGrowth, Characterization, Properties and Applications
EditorsAV Latyshev, AV Dvurechenskii, AL Aseev
PublisherElsevier Science Inc.
Pages59-99
Number of pages41
ISBN (Electronic)9780128105139
ISBN (Print)9780128105122
DOIs
Publication statusPublished - 1 Jan 2017

Keywords

  • Electronic configuration
  • Energy spectrum
  • Heterostructures
  • Infrared photodetectors
  • Localization
  • Quantum dots
  • Spin phenomena
  • PULSED IRRADIATION
  • GE/SI HETEROSTRUCTURES
  • COULOMB INTERACTION
  • LOW-ENERGY IONS
  • ARRAYS
  • LAYERS
  • INFRARED PHOTODETECTORS
  • HOPPING CONDUCTION
  • GROWTH
  • STRUCTURAL-PROPERTIES

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