Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

A. N. Akimov, I. O. Akhundov, D. V. Ishchenko, A. E. Klimov, I. G. Neizvestny, N. S. Paschin, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko, E. V. Fedosenko, V. N. Sherstyakova

Research output: Contribution to journalArticlepeer-review

Abstract

The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.

Original languageEnglish
Pages (from-to)951-955
Number of pages5
JournalSemiconductors
Volume54
Issue number8
DOIs
Publication statusPublished - 1 Aug 2020

Keywords

  • impurity states
  • PbSnTe
  • photoconductivity
  • surface states

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