Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

A. N. Akimov; I. O. Akhundov; D. V. Ishchenko; A. E. Klimov; I. G. Neizvestny; N. S. Paschin; S. P. Suprun; A. S. Tarasov; O. E. Tereshchenko; E. V. Fedosenko; V. N. Sherstyakova

doi:10.1134/S1063782620080035

Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

A. N. Akimov, I. O. Akhundov, D. V. Ishchenko, A. E. Klimov, I. G. Neizvestny, N. S. Paschin, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko, E. V. Fedosenko, V. N. Sherstyakova

Research output: Contribution to journal › Article › peer-review

Abstract

The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.

Original language	English
Pages (from-to)	951-955
Number of pages	5
Journal	Semiconductors
Volume	54
Issue number	8
DOIs	https://doi.org/10.1134/S1063782620080035
Publication status	Published - 1 Aug 2020

Keywords

impurity states
PbSnTe
photoconductivity
surface states

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10.1134/S1063782620080035

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Akimov, A. N., Akhundov, I. O., Ishchenko, D. V., Klimov, A. E., Neizvestny, I. G., Paschin, N. S., Suprun, S. P., Tarasov, A. S., Tereshchenko, O. E., Fedosenko, E. V., & Sherstyakova, V. N. (2020). Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime. Semiconductors, 54(8), 951-955. https://doi.org/10.1134/S1063782620080035

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title = "Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime",

abstract = "The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.",

keywords = "impurity states, PbSnTe, photoconductivity, surface states",

author = "Akimov, {A. N.} and Akhundov, {I. O.} and Ishchenko, {D. V.} and Klimov, {A. E.} and Neizvestny, {I. G.} and Paschin, {N. S.} and Suprun, {S. P.} and Tarasov, {A. S.} and Tereshchenko, {O. E.} and Fedosenko, {E. V.} and Sherstyakova, {V. N.}",

year = "2020",

month = aug,

day = "1",

doi = "10.1134/S1063782620080035",

language = "English",

volume = "54",

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AU - Akimov, A. N.

AU - Akhundov, I. O.

AU - Ishchenko, D. V.

AU - Klimov, A. E.

AU - Neizvestny, I. G.

AU - Paschin, N. S.

AU - Suprun, S. P.

AU - Tarasov, A. S.

AU - Tereshchenko, O. E.

AU - Fedosenko, E. V.

AU - Sherstyakova, V. N.

PY - 2020/8/1

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N2 - The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.

AB - The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.

KW - impurity states

KW - PbSnTe

KW - photoconductivity

KW - surface states

UR - http://www.scopus.com/inward/record.url?scp=85089101582&partnerID=8YFLogxK

U2 - 10.1134/S1063782620080035

DO - 10.1134/S1063782620080035

M3 - Article

AN - SCOPUS:85089101582

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JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 8

ER -

Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

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Keywords

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