Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3

Ryota Akiyama, Kazuki Sumida, Satoru Ichinokura, Ryosuke Nakanishi, Akio Kimura, Konstantin A. Kokh, Oleg E. Tereshchenko, Shuji Hasegawa

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We show Shubnikov-de Haas (SdH) oscillations in topological insulator (BixSb1-x)2Te3 flakes whose carrier types are p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, carrier mobility, and scattering time significantly changed by tuning the Fermi-level position with the concentration x. The analyses of SdH oscillations by Landau-level fan diagram, Lifshitz-Kosevich theory, and Dingle-plot in the p-type samples with x = 0.29 and 0.34 showed the Berry phase of zero and a relatively low mobility (2000-6000 cm2 V-1 s-1). This is due to the dominant bulk component in transport. On the other hand, the mobility in the n-type sample with x = 0.42 reached a very large value ∼17 000 cm2 V-1 s-1 and the Berry phase of near π, whereas the SdH oscillations were neither purely two- nor three-dimensional. These suggest that the transport channel has a surface-bulk coupling state which makes the carrier scattering lesser and enhances the mobility and has a character between two- and three-dimension.

Original languageEnglish
Article number265001
Number of pages8
JournalJournal of Physics Condensed Matter
Volume30
Issue number26
DOIs
Publication statusPublished - 6 Jun 2018

Keywords

  • (BiSb)Te
  • Berry phase
  • electrical transport
  • quantum oscillation
  • Shubnikov-de Haas oscillation
  • topological insulator
  • SB2TE3
  • CONDUCTION
  • BI2SE3
  • BI2TE3
  • SURFACE-STATE
  • (BixSb1-x)(2)Te-3

Fingerprint Dive into the research topics of 'Shubnikov-de Haas oscillations in p and n-type topological insulator (Bi<sub>x</sub>Sb<sub>1-x</sub>)<sub>2</sub>Te<sub>3</sub>'. Together they form a unique fingerprint.

Cite this