Shapes of the micron-sized SiGe islands grown on Si(100) in Dewetting Conditions

Anastasia E. Budazhapova, Alexander A. Shklyaev

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

1 Citation (Scopus)

Abstract

The shape of the islands formed during the Ge deposition on Si(100) surfaces in dewetting conditions is analyzed on the basis of surface layer energy minimization. An analytical expression for the total energy is derived for the sphere segment-shaped islands with contact angles up to 180° with respect to the substrate. It is found that the island shape is determined by the balance between the surface energy of the Si substrate areas located around the islands and the elastic energy of the areas around the island/substrate interface.

Original languageEnglish
Title of host publication2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings
PublisherIEEE Computer Society
Pages16-18
Number of pages3
Volume2018-July
ISBN (Print)9781538650219
DOIs
Publication statusPublished - 13 Aug 2018
Event19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Erlagol, Altai, Russian Federation
Duration: 29 Jun 20183 Jul 2018

Conference

Conference19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018
CountryRussian Federation
CityErlagol, Altai
Period29.06.201803.07.2018

Keywords

  • Island shapes
  • Solid-state dewetting
  • Surface layer energy

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