Self-assembled epitaxial metal-semiconductor nanostructures with enhanced GeSi quantum dot luminescence

V. A. Zinovyev, A. F. Zinovieva, A. V. Nenashev, A. V. Dvurechenskii, A. V. Katsuba, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi

Research output: Contribution to journalArticlepeer-review

Abstract

Hybrid structures containing Ag nanoparticles and GeSi quantum dots were developed using the self-organization of metal nanoislands on the surface of a strained semiconductor structure. The enhanced photoluminescence from GeSi quantum dots (QDs) coupled with Ag nanoislands was obtained. Ag nanoislands epitaxially grown on top of the multilayered structures with GeSi QDs support a surface plasmon resonance that can be tuned to the QD emission wavelength by changing Ag nanoparticle parameters. The numerical modeling of surface plasmon resonance allows attributing this effect to the increase of the recombination rate due to the coupling of QD emitters with Ag nanoislands.

Original languageEnglish
Article number243108
Number of pages7
JournalJournal of Applied Physics
Volume127
Issue number24
DOIs
Publication statusPublished - 28 Jun 2020

Keywords

  • EMISSION
  • PHOTOLUMINESCENCE

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