Relaxational kinetics of photoemission and photon-enhanced thermionic emission from p-GaAs surface with nonequilibrium Cs overlayers

A. G. Zhuravlev; V. L. Alperovich

doi:10.1016/j.apsusc.2018.06.157

Relaxational kinetics of photoemission and photon-enhanced thermionic emission from p-GaAs surface with nonequilibrium Cs overlayers

A. G. Zhuravlev, V. L. Alperovich

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Photoreflectance and photoemission quantum yield spectroscopies are used for the experimental study of direct photoemission, photon-enhanced thermionic emission (PETE), surface band bending and photovoltage, effective electron affinity, and probabilities of electron escape into a vacuum under cesium deposition on the Ga-rich p-GaAs(0 0 1) surface and the subsequent structural relaxation in the absorbed overlayer. The relaxational decrease of the direct photoemission and PETE at small Cs coverages is caused by the band bending decrease, while the photocurrent relaxational increase at large coverages is due to electron affinity relaxation.

Original language	English
Pages (from-to)	10-16
Number of pages	7
Journal	Applied Surface Science
Volume	461
DOIs	https://doi.org/10.1016/j.apsusc.2018.06.157
Publication status	Published - 15 Dec 2018

Keywords

Cesium
GaAs surface
Photoemission
Photon-enhanced thermionic emission
Relaxational kinetics
Solar energy conversion
ROOM-TEMPERATURE
VACUUM
STATES
NEGATIVE ELECTRON-AFFINITY
GAAS(100) SURFACES
ADSORPTION
DEPENDENCE
PHOTOREFLECTANCE
TRANSITION
SPECTRA

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10.1016/j.apsusc.2018.06.157

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@article{6d16778cd77c443083694e8b1c80c227,

title = "Relaxational kinetics of photoemission and photon-enhanced thermionic emission from p-GaAs surface with nonequilibrium Cs overlayers",

abstract = "Photoreflectance and photoemission quantum yield spectroscopies are used for the experimental study of direct photoemission, photon-enhanced thermionic emission (PETE), surface band bending and photovoltage, effective electron affinity, and probabilities of electron escape into a vacuum under cesium deposition on the Ga-rich p-GaAs(0 0 1) surface and the subsequent structural relaxation in the absorbed overlayer. The relaxational decrease of the direct photoemission and PETE at small Cs coverages is caused by the band bending decrease, while the photocurrent relaxational increase at large coverages is due to electron affinity relaxation.",

keywords = "Cesium, GaAs surface, Photoemission, Photon-enhanced thermionic emission, Relaxational kinetics, Solar energy conversion, ROOM-TEMPERATURE, VACUUM, STATES, NEGATIVE ELECTRON-AFFINITY, GAAS(100) SURFACES, ADSORPTION, DEPENDENCE, PHOTOREFLECTANCE, TRANSITION, SPECTRA",

author = "Zhuravlev, {A. G.} and Alperovich, {V. L.}",

year = "2018",

month = dec,

day = "15",

doi = "10.1016/j.apsusc.2018.06.157",

language = "English",

volume = "461",

pages = "10--16",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Relaxational kinetics of photoemission and photon-enhanced thermionic emission from p-GaAs surface with nonequilibrium Cs overlayers

AU - Zhuravlev, A. G.

AU - Alperovich, V. L.

PY - 2018/12/15

Y1 - 2018/12/15

N2 - Photoreflectance and photoemission quantum yield spectroscopies are used for the experimental study of direct photoemission, photon-enhanced thermionic emission (PETE), surface band bending and photovoltage, effective electron affinity, and probabilities of electron escape into a vacuum under cesium deposition on the Ga-rich p-GaAs(0 0 1) surface and the subsequent structural relaxation in the absorbed overlayer. The relaxational decrease of the direct photoemission and PETE at small Cs coverages is caused by the band bending decrease, while the photocurrent relaxational increase at large coverages is due to electron affinity relaxation.

AB - Photoreflectance and photoemission quantum yield spectroscopies are used for the experimental study of direct photoemission, photon-enhanced thermionic emission (PETE), surface band bending and photovoltage, effective electron affinity, and probabilities of electron escape into a vacuum under cesium deposition on the Ga-rich p-GaAs(0 0 1) surface and the subsequent structural relaxation in the absorbed overlayer. The relaxational decrease of the direct photoemission and PETE at small Cs coverages is caused by the band bending decrease, while the photocurrent relaxational increase at large coverages is due to electron affinity relaxation.

KW - Cesium

KW - GaAs surface

KW - Photoemission

KW - Photon-enhanced thermionic emission

KW - Relaxational kinetics

KW - Solar energy conversion

KW - ROOM-TEMPERATURE

KW - VACUUM

KW - STATES

KW - NEGATIVE ELECTRON-AFFINITY

KW - GAAS(100) SURFACES

KW - ADSORPTION

KW - DEPENDENCE

KW - PHOTOREFLECTANCE

KW - TRANSITION

KW - SPECTRA

UR - http://www.scopus.com/inward/record.url?scp=85049304169&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2018.06.157

DO - 10.1016/j.apsusc.2018.06.157

M3 - Article

AN - SCOPUS:85049304169

VL - 461

SP - 10

EP - 16

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

Relaxational kinetics of photoemission and photon-enhanced thermionic emission from p-GaAs surface with nonequilibrium Cs overlayers

Abstract

Keywords

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