Relaxation of the Excited States of Arsenic in Strained Germanium

K. A. Kovalevsky, Yu Yu Choporova, R. Kh Zhukavin, N. V. Abrosimov, S. G. Pavlov, H. W. Hübers, V. V. Tsyplenkov, V. D. Kukotenko, B. A. Knyazev, V. N. Shastin

Research output: Contribution to journalArticlepeer-review

Abstract

The relaxation times of the lower p states of the arsenic donor in a germanium crystal strained along the [111] crystallographic direction are studied. Measurements are performed by the pump–probe method, using free-electron laser radiation. The states are excited from the 1s (Γ1) ground state. The experimentally measured decay times of the 2p0, 3p0, and 2p± states are 1.3, no more than 0.2, and 0.4 ns, respectively. It is shown that the relatively high relaxation rate of the 2p± state is defined by the interaction with intravalley TA photons.

Original languageEnglish
Pages (from-to)1347-1351
Number of pages5
JournalSemiconductors
Volume54
Issue number10
DOIs
Publication statusPublished - 1 Oct 2020

Keywords

  • arsenic
  • germanium
  • intracenter optical excitation
  • phonons
  • pump–probe method
  • uniaxial strain
  • pump-probe method
  • TIMES
  • INTRACENTER RELAXATION
  • POPULATION-INVERSION
  • DONORS

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