Relaxation of the electric current in Si3N4: Experiment and numerical simulation

Yu N. Novikov, V. A. Gritsenko

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 × 10–13 cm2.

Original languageEnglish
Pages (from-to)47-52
Number of pages6
JournalPhysics of the Solid State
Volume59
Issue number1
DOIs
Publication statusPublished - 1 Jan 2017

Keywords

  • SILICON-NITRIDE FILMS
  • MEMORY
  • SEMICONDUCTOR
  • IONIZATION
  • TRANSPORT
  • TRAP

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