Relaxation of the electric current in Si3N4: Experiment and numerical simulation

Yu N. Novikov; V. A. Gritsenko

doi:10.1134/S1063783417010255

Relaxation of the electric current in Si₃N₄: Experiment and numerical simulation

Yu N. Novikov, V. A. Gritsenko

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 × 10^–13 cm².

Original language	English
Pages (from-to)	47-52
Number of pages	6
Journal	Physics of the Solid State
Volume	59
Issue number	1
DOIs	https://doi.org/10.1134/S1063783417010255
Publication status	Published - 1 Jan 2017

Keywords

SILICON-NITRIDE FILMS
MEMORY
SEMICONDUCTOR
IONIZATION
TRANSPORT
TRAP

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abstract = "The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 × 10–13 cm2.",

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AB - The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 × 10–13 cm2.

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KW - MEMORY

KW - SEMICONDUCTOR

KW - IONIZATION

KW - TRANSPORT

KW - TRAP

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JF - Physics of the Solid State

SN - 1063-7834

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ER -

Relaxation of the electric current in Si₃N₄: Experiment and numerical simulation

Abstract

Keywords

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