Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers

V. S. Khoroshilov, D. E. Protopopov, D. M. Kazantsev, A. G. Zhuravlev

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

A contactless two-beam modulated photoemission technique for measuring the photovoltage on the surface of highly doped semiconductors is proposed and verified for the p+-GaAs surface with adsorbed Cs. The surface photovoltage evolution under the Cs deposition on the highly doped p+-GaAs surface is compared with that observed on Cs/UP+-structures by the photoreflectance spectroscopy method. The pump intensity dependence of the photovoltage is measured. This allows us to determine the absolute photovoltage values.

Original languageEnglish
Article number012013
JournalJournal of Physics: Conference Series
Volume1482
Issue number1
DOIs
Publication statusPublished - 1 Mar 2020
Event21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 - St. Petersburg, Russian Federation
Duration: 25 Nov 201929 Nov 2019

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