Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge

A. F. Zinovieva, V. A. Zinovyev, A. V. Nenashev, S. A. Teys, A. V. Dvurechenskii, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The photoluminescence (PL) of the combined Ge/Si structures representing a combination of large (200–250 nm) GeSi disk-like quantum dots (nanodisks) and four-layered stacks of compact groups of smaller (30 nm) quantum dots grown in the strain field of nanodisks was studied. The multiple increase in the PL intensity was achieved by the variation of parameters of vertically aligned quantum dot groups. The experimental results were analyzed on the basis of calculations of energy spectra, electron and hole wave functions. It was found that the quantum dot arrangement in compact groups provides the effective electron localization in Δx,y-valleys with an almost equal probability of finding an electron in the Si spacer and Ge barrier. As a result, the main channels of radiative recombination in the structures under study correspond to spatially direct optical transitions.

Original languageEnglish
Article number9308
Number of pages9
JournalScientific Reports
Volume10
Issue number1
DOIs
Publication statusPublished - 9 Jun 2020

Keywords

  • SELF-ASSEMBLED ISLANDS
  • EMISSION
  • ELECTROLUMINESCENCE
  • SI

Fingerprint Dive into the research topics of 'Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge'. Together they form a unique fingerprint.

Cite this