Photoemission properties of flat and rough GaAs surfaces with cesium and oxygen layers

A. G. Zhuravlev, D. M. Kazantsev, V. S. Khoroshilov, A. S. Kozhukhov, V. L. Alperovich

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

The evolution of surface band bending and the probabilities of electron emission in a vacuum are studied under cesium and oxygen deposition on atomically flat and rough As-rich and Ga-rich GaAs (001) surfaces by means of photoreflectance spectroscopy and photoemission quantum-yield spectroscopy. On the rough surface, as compared to the flat one, the suppression of non-monotonic Cs-induced band bending variations is observed, along with the overall band bending increase. Multiple repeated activations of the GaAs (001) surface by cesium and oxygen followed by vacuum anneals led to an increase in the root-mean-square roughness from Rq 0.1-0.2 nm up to 3 nm. As a result, the probability of electron escape into vacuum decreased by half.

Original languageEnglish
Article number012007
Number of pages6
JournalJournal of Physics: Conference Series
Volume993
Issue number1
DOIs
Publication statusPublished - 10 Apr 2018
Event19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Russian Federation
Duration: 27 Nov 20171 Dec 2017

Keywords

  • NEGATIVE ELECTRON-AFFINITY
  • EMISSION

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