The evolution of surface band bending and the probabilities of electron emission in a vacuum are studied under cesium and oxygen deposition on atomically flat and rough As-rich and Ga-rich GaAs (001) surfaces by means of photoreflectance spectroscopy and photoemission quantum-yield spectroscopy. On the rough surface, as compared to the flat one, the suppression of non-monotonic Cs-induced band bending variations is observed, along with the overall band bending increase. Multiple repeated activations of the GaAs (001) surface by cesium and oxygen followed by vacuum anneals led to an increase in the root-mean-square roughness from Rq 0.1-0.2 nm up to 3 nm. As a result, the probability of electron escape into vacuum decreased by half.
|Number of pages||6|
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 10 Apr 2018|
|Event||19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Russian Federation|
Duration: 27 Nov 2017 → 1 Dec 2017
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