Photoelectron scattering in a p-GaN(Cs,O) photocathode

S. A. Rozhkov, V. V. Bakin, S. N. Kosolobov, H. E. Scheibler, A. S. Terekhov

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

Photoelectron scattering in a p-GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN-vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m hh/m 0 = 2.3 ± 0.3.

Original languageEnglish
Article number012027
Number of pages7
JournalJournal of Physics: Conference Series
Volume993
Issue number1
DOIs
Publication statusPublished - 10 Apr 2018
Event19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Russian Federation
Duration: 27 Nov 20171 Dec 2017

Keywords

  • NEGATIVE ELECTRON-AFFINITY
  • GAN
  • BAND
  • INTERFACE

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