Photoelectron scattering in a p-GaN(Cs,O) photocathode

S. A. Rozhkov; V. V. Bakin; S. N. Kosolobov; H. E. Scheibler; A. S. Terekhov

doi:10.1088/1742-6596/993/1/012027

Photoelectron scattering in a p-GaN(Cs,O) photocathode

S. A. Rozhkov, V. V. Bakin, S. N. Kosolobov, H. E. Scheibler, A. S. Terekhov

General Physics Section

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Photoelectron scattering in a p-GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN-vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m _hh/m ₀ = 2.3 ± 0.3.

Original language	English
Article number	012027
Number of pages	7
Journal	Journal of Physics: Conference Series
Volume	993
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/993/1/012027
Publication status	Published - 10 Apr 2018
Event	19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Russian Federation Duration: 27 Nov 2017 → 1 Dec 2017

Keywords

NEGATIVE ELECTRON-AFFINITY
GAN
BAND
INTERFACE

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10.1088/1742-6596/993/1/012027

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title = "Photoelectron scattering in a p-GaN(Cs,O) photocathode",

abstract = "Photoelectron scattering in a p-GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN-vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m hh/m 0 = 2.3 ± 0.3.",

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AU - Rozhkov, S. A.

AU - Bakin, V. V.

AU - Kosolobov, S. N.

AU - Scheibler, H. E.

AU - Terekhov, A. S.

PY - 2018/4/10

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N2 - Photoelectron scattering in a p-GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN-vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m hh/m 0 = 2.3 ± 0.3.

AB - Photoelectron scattering in a p-GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN-vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m hh/m 0 = 2.3 ± 0.3.

KW - NEGATIVE ELECTRON-AFFINITY

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KW - BAND

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