Photoelectron scattering in a p-GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN-vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m hh/m 0 = 2.3 ± 0.3.
|Number of pages||7|
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 10 Apr 2018|
|Event||19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Russian Federation|
Duration: 27 Nov 2017 → 1 Dec 2017
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