Optical properties of Si nanocrystals formed with laser pulse annealing

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Abstract

Nano- and femtosecond laser pulse annealings were applied for crystallization of thin amorphous Si films and amorphous Si nanoclusters in silicon-rich nitride and oxide films. Laser assisted formation of amorphous Si nanoclusters in the non-stoichiometric dielectric films was observed. Non-thermal effects in crystallization of amorphous Si by femtosecond annealing were supposed. This approach is applicable for the creation of dielectric films with Si nanoclusters on non-refractory substrates.

Original languageEnglish
Pages (from-to)11402-11405
Number of pages4
JournalMaterials Today: Proceedings
Volume4
Issue number11
DOIs
Publication statusPublished - 2017

Keywords

  • hydrogenated amorphous silicon
  • pulse annealing
  • Raman scattering
  • Silicon nanocrystals
  • silicon nitride
  • silicon oxide
  • CRYSTALLIZATION
  • SILICON FILMS
  • SPECTROSCOPY

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