Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures

P. A. Bokhan, K. S. Zhuravlev, Dm E. Zakrevsky, T. V. Malin, I. V. Osinnykh, N. V. Fateev

Research output: Contribution to journalArticlepeer-review

Abstract

Gain characteristics of heavily doped AlxGa1 – xN/AlN:Si structures with c x = 0.65 and 0.74 have been studied under pulsed optical pumping by Nd:YAG laser radiation at wavelength λ = 266 nm. The absolute values of the optical gain measured at spectral maximum of the room-temperature luminescence spectrum reach (0.5–6) × 103 сm–1 at an pumping power density of 8–600 kW/cm2. Cross sections of the radiative and donor–acceptor recombination are close to each other and exceed 1016 cm2.

Original languageEnglish
Pages (from-to)951-954
Number of pages4
JournalTechnical Physics Letters
Volume45
Issue number9
DOIs
Publication statusPublished - 1 Sep 2019

Keywords

  • AlGa N/AlN
  • gain characteristics
  • heavily doped structures
  • AlxGa1-xN/AlN

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