Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity

P. A. Bokhan, N. V. Fateev, T. V. Malin, I. V. Osinnykh, Dm E. Zakrevsky, K. S. Zhuravlev

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Abstract

The pulse lasing in the broadband spectral range 420–590 nm was obtained from two squeezed together heavily Si doped Al0.74Ga0.26N/AlN/Al2O3 structures with external cavity under pump radiation with λp = 266 nm wavelength. These structures were grown by molecular beam epitaxy on (0001) oriented thick sapphire substrates. Stimulated emission at room temperature was observed with optical pumping thresholds 50 kW/cm2 in the semiconfocal cavity. The linear transverse-electric polarization dominates in the output emission. The optical gain coefficients values of (0.12–6) × 103 cm−1 for Al0.74Ga0.26N:Si films with inhomogeneous luminescence broadening were measured at 10–600 kW/cm2 pump power density radiation with 266 nm wavelength, 8 ns pulse duration and 10 Hz repetition rate.

Original languageEnglish
Article number109879
Number of pages5
JournalOptical Materials
Volume105
DOIs
Publication statusPublished - Jul 2020

Keywords

  • Donor-acceptor pair transitions
  • Doped AlGaN film
  • External cavity
  • Lasing threshold
  • Optical gain
  • Stimulated emission
  • LUMINESCENCE

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