Optical and electrical properties of synthetic single-crystal diamond under high-fluence ion irradiation

A. M. Borisov, V. A. Kazakov, E. S. Mashkova, M. A. Ovchinnikov, Yu N. Palyanov, V. P. Popov, E. A. Shmytkova

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The modification of the (111) face of synthetic diamond under high-fluence (≥1018 ion/cm2) 30-keV Ar+ irradiation is studied experimentally. It is found that ion irradiation at room temperature results in the formation of a low-conductivity surface layer. Heat treatment when the target temperature is increased to 400°C results in a more than ten-fold exponential drop in the layer resistance, as compared to its value at room temperature. If the temperature of the irradiated diamond is increased from 30 to 400°C the layer resistance of the ion-induced conductive layer drops by more than two orders of magnitude to the level corresponding to the conductivity of graphite-like materials. The Raman spectra of the ion-induced conductive surface layer reflect the processes of structural disorder—sp2-carbon ordering and strong changes in the optical transmittance of diamond after ion irradiation.

Original languageEnglish
Pages (from-to)619-624
Number of pages6
JournalJournal of Surface Investigation
Volume11
Issue number3
DOIs
Publication statusPublished - 1 May 2017
Externally publishedYes

Keywords

  • high-fluence ion irradiation
  • optical transmittance
  • Raman spectra
  • resistivity
  • sheet resistance
  • surface sheet
  • synthetic diamond
  • IMPLANTATION
  • AMORPHOUS-CARBON
  • RESISTIVITY
  • LAYERS

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