Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

S. V. Sitnikov, S. S. Kosolobov, A. V. Latyshev

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size Dcrit, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180°C at different silicon fluxes onto the surface. It is found that the parameter Dcrit 2 is a power function of the frequency of island nucleation, with the exponent χ = 0.9 ± 0.05 in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180°C and the minimum critical nucleus size corresponds to 12 silicon atoms.

Original languageEnglish
Pages (from-to)203-206
Number of pages4
JournalSemiconductors
Volume51
Issue number2
DOIs
Publication statusPublished - 1 Feb 2017

Keywords

  • PHASE-TRANSITION
  • SUBLIMATION
  • SURFACES
  • REM

Fingerprint

Dive into the research topics of 'Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth'. Together they form a unique fingerprint.

Cite this