Novel single-source precursors for SiB:XCyNz film deposition

Ivan S. Merenkov, Boris A. Gostevskii, Pavel O. Krasnov, Tamara V. Basova, Yuri M. Zhukov, Igor A. Kasatkin, Sergey V. Sysoev, Victor I. Kosyakov, Maksim N. Khomyakov, Marina L. Kosinova

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Novel CVD precursors for SiBxCyNz film deposition such as HCCB[N(SiMe3)2]2, MeB[N(SiMe3)2]2 and Me3SiCCB[N(SiMe3)2]2 were synthesized. The structure and composition of the compounds were investigated with NMR, FTIR, Raman spectroscopies and CHN-analysis. Comparison of theoretical and experimental FTIR and Raman data was performed. Thermogravimetric analysis and the static tensimetry method with a glass membrane null manometer demonstrated that Me3SiCCB[N(SiMe3)2]2 is the most suitable CVD precursor. The formation of SiBxCyNz films was predicted using thermodynamic modelling at a temperature below 1600 K in the total pressure range of 0.27-1333 Pa. The films of chemical composition Si23.7B8.3C51.4N9.6O7 were deposited by low-pressure chemical vapour deposition (LPCVD) and their morphology and mechanical properties were investigated. The amorphous SiBxCyNz films with a smooth surface exhibited hardness, Young's modulus and elastic recovery equal to 17.5 ± 0.9 GPa, 176 ± 11 GPa and 61 ± 2%, respectively.

Original languageEnglish
Pages (from-to)11926-11933
Number of pages8
JournalNew Journal of Chemistry
Volume41
Issue number20
DOIs
Publication statusPublished - 2017
Externally publishedYes

Keywords

  • C-N FILMS
  • GAUSSIAN-BASIS SETS
  • RAMAN-SPECTRA
  • ATOMS LI
  • APPROXIMATION
  • ENERGY

Fingerprint Dive into the research topics of 'Novel single-source precursors for SiB<sub>:X</sub>C<sub>y</sub>N<sub>z</sub> film deposition'. Together they form a unique fingerprint.

Cite this