New Method of Porous Ge Layer Fabrication: Structure and Optical Properties

E. B. Gorokhov, K. N. Astankova, I. A. Azarov, V. A. Volodin, A. V. Latyshev

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2<Ge–NCs> heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was supposed that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the selective etching of GeO2<Ge–NCs> heterolayers. The kinetics of air oxidation of amorphous porous Ge layers was investigated by scanning ellipsometry. Spectral ellipsometry allowed estimating the porosity of amorphous and crystalline porous Ge layers, which was ~70 and ~80%, respectively.

Original languageEnglish
Pages (from-to)628-631
Number of pages4
JournalSemiconductors
Volume52
Issue number5
DOIs
Publication statusPublished - 1 May 2018

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