Negative and Positive Photoconductivity and Memristor Effect in Alloyed GeO[SiO] Films Containing Ge Nanoclusters

Vladimir A. Volodin, Gennadiy N. Kamaev, Michel Vergnat

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Metal–insulator–semiconductor (MIS) structures based on GeO[SiO] films containing amorphous Ge nanoclusters are fabricated on n+-Si(100) substrate by co-evaporation of GeO2 and SiO powders in ultra-high vacuum. Indium tin oxide (ITO) top electrodes are deposited using magnetron sputtering. According to Raman data, annealing at 500 °C for 20 min leads to an increase in amorphous Ge volume. Current–voltage characteristics provide clear evidence of resistive switching (memristor effect) in the annealed MIS structure after the forming procedure. Both negative and positive photoconductivities are observed in the MIS structure before forming when both negative/positive voltage biases are applied to the top ITO electrode. This is possibly due to light-stimulated recharging of holes originating from Ge-nanoclusters, which act as traps.

Original languageEnglish
Article number2000165
Number of pages6
JournalPhysica Status Solidi - Rapid Research Letters
Volume14
Issue number7
DOIs
Publication statusPublished - 1 Jul 2020

Keywords

  • Ge nanoclusters
  • germanosilicate glasses
  • memristors
  • negative photoconductivity
  • MEMORY
  • SIO2-FILMS
  • SI
  • FIELD
  • NANOCRYSTALS
  • DEVICES

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