Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si/In2O3:Er films

K. V. Feklistov, A. G. Lemzyakov, I. P. Prosvirin, A. A. Gismatulin, A. A. Shklyaev, Y. A. Zhivodkov, G. Krivyakin, A. I. Komonov, A. S. Kozhukhov, E. V. Spesivsev, D. V. Gulyaev, D. S. Abramkin, A. M. Pugachev, D. G. Esaev, G. Y. Sidorov

Research output: Contribution to journalArticlepeer-review

Abstract

RF magnetron-deposited Si\In2O3:Er films have the structure of the single-crystalline bixbyite bcc In2O3 nanowires bunched into the columns extended across the films. The obtained films have a typical In2O3 optical band gap of 3.55 eV and demonstrate the 1.54 μm Er3+ room temperature photoluminescence. The current across the film flows inside the columns through the nanowires. The current through the MOS-structure with the intermediate low barrier In2O3:Er dielectric was investigated by the thermionic emission approach, with respect to the partial voltage drop in silicon. Schottky plots ln(I/T 2) versus 1/kT of forward currents at small biases and backward currents in saturation give the electron forward n-Si\In2O3:Er barrier equal to 0.14 eV and the backward In\In2O3:Er barrier equal to 0.21 eV.

Original languageEnglish
Article number125903
Number of pages11
JournalMaterials Research Express
Volume7
Issue number12
DOIs
Publication statusPublished - Dec 2020

Keywords

  • Band offset
  • InO:Er
  • Nanowires
  • Photoluminescence
  • Silicon
  • Thermionic emission
  • Thin films
  • thermionic emission
  • band offset
  • photoluminescence
  • EXCITATION
  • PHOTOLUMINESCENCE
  • ER3+
  • In2O3
  • ELECTRICAL-PROPERTIES
  • SILICON
  • Er
  • ERBIUM
  • ELECTROLUMINESCENCE
  • thin films
  • nanowires
  • OXIDE THIN-FILMS
  • IN2O3
  • >

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