Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization

Vladimir A. Gritsenko, Yuriy N. Novikov, Timofey V. Perevalov, Vladimir N. Kruchinin, Vladimir S. Aliev, Alina K. Gerasimova, Simon B. Erenburg, Svetlana V. Trubina, Kristina O. Kvashnina, Igor P. Prosvirin, Mario Lanza

Research output: Contribution to journalArticlepeer-review

Abstract

X-ray photoelectron spectroscopy, extended X-ray absorption fine structure spectroscopy (EXAFS), X-ray absorption near edge structure (XANES) spectroscopy, spectral ellipsometry, and quantum-chemistry calculations are used to examine the atomic and electronic structure of nonstoichiometric amorphous ZrOx slightly enriched with zirconium. The experimental data show that the ZrOx material consists of stoichiometric ZrO2, metallic Zr, and zirconium suboxides ZrOy. A model of nanoscale spatial potential fluctuations in ZrOx is substantiated. In this model, the potential fluctuations for electrons and holes arise due to the local bandgap energy fluctuations in the range from 0 to 5.4 eV. A ZrOx-based flash memory element with giant retention time is proposed.

Original languageEnglish
Article number1700592
Number of pages8
JournalAdvanced Electronic Materials
Volume4
Issue number9
DOIs
Publication statusPublished - 1 Sep 2018

Keywords

  • DFT simulation
  • Flash memory devices
  • Oxygen vacancy
  • Potential fluctuations
  • ZrO
  • oxygen vacancy
  • flash memory devices
  • potential fluctuations
  • DEVICE
  • X-RAY-ABSORPTION
  • ZrOx
  • POLYMORPHS
  • ZRO2
  • FILMS

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