Multiphonon trap ionization mechanism in amorphous SiNx

Yu N. Novikov; V. A. Gritsenko

doi:10.1016/j.jnoncrysol.2022.121442

Multiphonon trap ionization mechanism in amorphous SiN_x

Yu N. Novikov, V. A. Gritsenko

Лаборатория полупроводниковых и диэлектрических материалов ФФ

Research output: Contribution to journal › Article › peer-review

Abstract

The charge transport mechanism in amorphous silicon nitride (a-SiN_x) is experimentally analyzed in a wide range of electric fields and temperatures. The Frenkel effect with thermally assisted tunneling (TAT) and the multiphonon mechanism were used to describe the trap ionization. It is shown that the widespread Frenkel effect with TAT formally describes the experiment, but the agreement with the experiment is obtained if a small frequency factor (10⁹ s⁻¹) and a large tunneling effective mass (m*=3m₀) are used. Thus, the Frenkel effect does not describe the charge transport in a-SiN_x. The charge transport in a-SiN_x is satisfactorily described by the multiphonon trap ionization mechanism with the following parameters: m* = 0.6m₀, thermal and optical energies - W_T = 1.6 eV and W_OPT = 3.2 eV, respectively.

Original language	English
Article number	121442
Journal	Journal of Non-Crystalline Solids
Volume	582
DOIs	https://doi.org/10.1016/j.jnoncrysol.2022.121442
Publication status	Published - 15 Apr 2022

Keywords

amorphous silicon nitride
charge transport
multiphonon ionization mechanism
SiN
traps

OECD FOS+WOS

2.05 MATERIALS ENGINEERING
1.03 PHYSICAL SCIENCES AND ASTRONOMY

Access to Document

10.1016/j.jnoncrysol.2022.121442

Cite this

@article{dc7437bf021d4fc6ade1c11cf6c05cbb,

title = "Multiphonon trap ionization mechanism in amorphous SiNx",

abstract = "The charge transport mechanism in amorphous silicon nitride (a-SiNx) is experimentally analyzed in a wide range of electric fields and temperatures. The Frenkel effect with thermally assisted tunneling (TAT) and the multiphonon mechanism were used to describe the trap ionization. It is shown that the widespread Frenkel effect with TAT formally describes the experiment, but the agreement with the experiment is obtained if a small frequency factor (109 s−1) and a large tunneling effective mass (m*=3m0) are used. Thus, the Frenkel effect does not describe the charge transport in a-SiNx. The charge transport in a-SiNx is satisfactorily described by the multiphonon trap ionization mechanism with the following parameters: m* = 0.6m0, thermal and optical energies - WT = 1.6 eV and WOPT = 3.2 eV, respectively.",

keywords = "amorphous silicon nitride, charge transport, multiphonon ionization mechanism, SiN, traps",

author = "Novikov, {Yu N.} and Gritsenko, {V. A.}",

note = "Funding Information: Experiments were carried out under the grant of the Russian Foundation for Basic Research (RFBR) (project № 19-29-03018 ) and, partially, the work was carried out under state contract with the ISP SBRAS program № 0242-2021-0003 (models and numerical calculations). Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

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doi = "10.1016/j.jnoncrysol.2022.121442",

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AU - Novikov, Yu N.

AU - Gritsenko, V. A.

N1 - Funding Information: Experiments were carried out under the grant of the Russian Foundation for Basic Research (RFBR) (project № 19-29-03018 ) and, partially, the work was carried out under state contract with the ISP SBRAS program № 0242-2021-0003 (models and numerical calculations). Publisher Copyright: © 2022 Elsevier B.V.

PY - 2022/4/15

Y1 - 2022/4/15

N2 - The charge transport mechanism in amorphous silicon nitride (a-SiNx) is experimentally analyzed in a wide range of electric fields and temperatures. The Frenkel effect with thermally assisted tunneling (TAT) and the multiphonon mechanism were used to describe the trap ionization. It is shown that the widespread Frenkel effect with TAT formally describes the experiment, but the agreement with the experiment is obtained if a small frequency factor (109 s−1) and a large tunneling effective mass (m*=3m0) are used. Thus, the Frenkel effect does not describe the charge transport in a-SiNx. The charge transport in a-SiNx is satisfactorily described by the multiphonon trap ionization mechanism with the following parameters: m* = 0.6m0, thermal and optical energies - WT = 1.6 eV and WOPT = 3.2 eV, respectively.

AB - The charge transport mechanism in amorphous silicon nitride (a-SiNx) is experimentally analyzed in a wide range of electric fields and temperatures. The Frenkel effect with thermally assisted tunneling (TAT) and the multiphonon mechanism were used to describe the trap ionization. It is shown that the widespread Frenkel effect with TAT formally describes the experiment, but the agreement with the experiment is obtained if a small frequency factor (109 s−1) and a large tunneling effective mass (m*=3m0) are used. Thus, the Frenkel effect does not describe the charge transport in a-SiNx. The charge transport in a-SiNx is satisfactorily described by the multiphonon trap ionization mechanism with the following parameters: m* = 0.6m0, thermal and optical energies - WT = 1.6 eV and WOPT = 3.2 eV, respectively.

KW - amorphous silicon nitride

KW - charge transport

KW - multiphonon ionization mechanism

KW - SiN

KW - traps

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