Multiphonon trap ionization mechanism in amorphous SiNx

Yu N. Novikov, V. A. Gritsenko

Research output: Contribution to journalArticlepeer-review

Abstract

The charge transport mechanism in amorphous silicon nitride (a-SiNx) is experimentally analyzed in a wide range of electric fields and temperatures. The Frenkel effect with thermally assisted tunneling (TAT) and the multiphonon mechanism were used to describe the trap ionization. It is shown that the widespread Frenkel effect with TAT formally describes the experiment, but the agreement with the experiment is obtained if a small frequency factor (109 s−1) and a large tunneling effective mass (m*=3m0) are used. Thus, the Frenkel effect does not describe the charge transport in a-SiNx. The charge transport in a-SiNx is satisfactorily described by the multiphonon trap ionization mechanism with the following parameters: m* = 0.6m0, thermal and optical energies - WT = 1.6 eV and WOPT = 3.2 eV, respectively.

Original languageEnglish
Article number121442
JournalJournal of Non-Crystalline Solids
Volume582
DOIs
Publication statusPublished - 15 Apr 2022

Keywords

  • amorphous silicon nitride
  • charge transport
  • multiphonon ionization mechanism
  • SiN
  • traps

OECD FOS+WOS

  • 2.05 MATERIALS ENGINEERING
  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY

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