Monte Carlo simulation of roughening at step-terraced surfaces

D. M. Kazantsev; N. L. Shwartz; V. L. Alperovich

doi:10.1088/1742-6596/1199/1/012010

Monte Carlo simulation of roughening at step-terraced surfaces

D. M. Kazantsev, N. L. Shwartz, V. L. Alperovich

Research output: Contribution to journal › Conference article › peer-review

Abstract

GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schwöbel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schwöbel barrier E _S = 0.4 eV is estimated for the GaAs(001) surface.

Original language	English
Article number	012010
Journal	Journal of Physics: Conference Series
Volume	1199
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/1199/1/012010
Publication status	Published - 17 Apr 2019
Event	20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 - St. Petersburg, Russian Federation Duration: 26 Nov 2018 → 30 Nov 2018

Access to Document

10.1088/1742-6596/1199/1/012010

Cite this

@article{c7403fc78d154d08b25c59f3df9d4bb5,

title = "Monte Carlo simulation of roughening at step-terraced surfaces",

abstract = " GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schw{\"o}bel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schw{\"o}bel barrier E S = 0.4 eV is estimated for the GaAs(001) surface. ",

author = "Kazantsev, {D. M.} and Shwartz, {N. L.} and Alperovich, {V. L.}",

year = "2019",

month = apr,

day = "17",

doi = "10.1088/1742-6596/1199/1/012010",

language = "English",

volume = "1199",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

note = "20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 ; Conference date: 26-11-2018 Through 30-11-2018",

}

TY - JOUR

T1 - Monte Carlo simulation of roughening at step-terraced surfaces

AU - Kazantsev, D. M.

AU - Shwartz, N. L.

AU - Alperovich, V. L.

PY - 2019/4/17

Y1 - 2019/4/17

N2 - GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schwöbel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schwöbel barrier E S = 0.4 eV is estimated for the GaAs(001) surface.

AB - GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schwöbel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schwöbel barrier E S = 0.4 eV is estimated for the GaAs(001) surface.

UR - http://www.scopus.com/inward/record.url?scp=85065624644&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1199/1/012010

DO - 10.1088/1742-6596/1199/1/012010

M3 - Conference article

AN - SCOPUS:85065624644

VL - 1199

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012010

T2 - 20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018

Y2 - 26 November 2018 through 30 November 2018

ER -

Monte Carlo simulation of roughening at step-terraced surfaces

Abstract

Access to Document

Other files and links

Fingerprint

Cite this