Monte Carlo simulation of roughening at step-terraced surfaces

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GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schwöbel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schwöbel barrier E S = 0.4 eV is estimated for the GaAs(001) surface.

Original languageEnglish
Article number012010
JournalJournal of Physics: Conference Series
Issue number1
Publication statusPublished - 17 Apr 2019
Event20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 - St. Petersburg, Russian Federation
Duration: 26 Nov 201830 Nov 2018


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