Abstract
GaAs thermal smoothing at temperatures T ≤ 650°C under conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures T ≥ 700°C, surface smoothing changes to roughening. In the present paper, thermal roughening of a step-terraced surface caused by atomic step flow around step pinning centers is studied using Monte-Carlo simulation. It is proved that the Schwöbel barrier is necessary for step bunching in the presence of step pinning centers. The lower limit of the Schwöbel barrier E S = 0.4 eV is estimated for the GaAs(001) surface.
Original language | English |
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Article number | 012010 |
Journal | Journal of Physics: Conference Series |
Volume | 1199 |
Issue number | 1 |
DOIs | |
Publication status | Published - 17 Apr 2019 |
Event | 20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018 - St. Petersburg, Russian Federation Duration: 26 Nov 2018 → 30 Nov 2018 |