Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

O. A. Tkachenko, V. A. Tkachenko, Z. D. Kvon, D. V. Sheglov, Alexander L. Aseev

Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

Abstract

Various semiconductor devices created by molecular beam epitaxy and lithography were numerically modeled: a quantum point contact in the voltage gate-induced two-dimensional electron gas, a versatile tunable two-terminal quantum dot, a small three-terminal quantum dot, and ring interferometers. Three-dimensional electrostatics calculations, taking into account the design of structures, combined with the theories of Coulomb blockade and quantum ballistic transport, allowed explanation of the observed resistance features of nanodevices. Accumulated experience was used to design semiconductor artificial graphene.

Original languageEnglish
Title of host publicationAdvances in Semiconductor Nanostructures
Subtitle of host publicationGrowth, Characterization, Properties and Applications
EditorsAV Latyshev, AV Dvurechenskii, AL Aseev
PublisherElsevier Science Inc.
Pages131-155
Number of pages25
ISBN (Electronic)9780128105139
ISBN (Print)9780128105122
DOIs
Publication statusPublished - 1 Jan 2017

Keywords

  • 2DEG
  • 3D-electrostatic potentials
  • Coulomb blockade
  • Disorder
  • Graphene-like superlattice
  • Nanolithography
  • Quantum ballistics
  • Quantum dot
  • Quantum point contact
  • Ring interferometer
  • Simulation
  • Supercomputer calculation
  • CONDUCTANCE
  • RING INTERFEROMETER
  • DOT
  • POINT CONTACTS
  • OSCILLATIONS
  • SCATTERING

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