Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

O. A. Tkachenko; V. A. Tkachenko; Z. D. Kvon; D. V. Sheglov; Alexander L. Aseev

doi:10.1016/B978-0-12-810512-2.00006-8

Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

O. A. Tkachenko, V. A. Tkachenko, Z. D. Kvon, D. V. Sheglov, Alexander L. Aseev

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

Abstract

Various semiconductor devices created by molecular beam epitaxy and lithography were numerically modeled: a quantum point contact in the voltage gate-induced two-dimensional electron gas, a versatile tunable two-terminal quantum dot, a small three-terminal quantum dot, and ring interferometers. Three-dimensional electrostatics calculations, taking into account the design of structures, combined with the theories of Coulomb blockade and quantum ballistic transport, allowed explanation of the observed resistance features of nanodevices. Accumulated experience was used to design semiconductor artificial graphene.

Original language	English
Title of host publication	Advances in Semiconductor Nanostructures
Subtitle of host publication	Growth, Characterization, Properties and Applications
Editors	AV Latyshev, AV Dvurechenskii, AL Aseev
Publisher	Elsevier Science Inc.
Pages	131-155
Number of pages	25
ISBN (Electronic)	9780128105139
ISBN (Print)	9780128105122
DOIs	https://doi.org/10.1016/B978-0-12-810512-2.00006-8
Publication status	Published - 1 Jan 2017

Keywords

2DEG
3D-electrostatic potentials
Coulomb blockade
Disorder
Graphene-like superlattice
Nanolithography
Quantum ballistics
Quantum dot
Quantum point contact
Ring interferometer
Simulation
Supercomputer calculation
CONDUCTANCE
RING INTERFEROMETER
DOT
POINT CONTACTS
OSCILLATIONS
SCATTERING

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10.1016/B978-0-12-810512-2.00006-8

Cite this

Tkachenko, O. A., Tkachenko, V. A., Kvon, Z. D., Sheglov, D. V., & Aseev, A. L. (2017). Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures. In AV. Latyshev, AV. Dvurechenskii, & AL. Aseev (Eds.), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications (pp. 131-155). Elsevier Science Inc.. https://doi.org/10.1016/B978-0-12-810512-2.00006-8

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abstract = "Various semiconductor devices created by molecular beam epitaxy and lithography were numerically modeled: a quantum point contact in the voltage gate-induced two-dimensional electron gas, a versatile tunable two-terminal quantum dot, a small three-terminal quantum dot, and ring interferometers. Three-dimensional electrostatics calculations, taking into account the design of structures, combined with the theories of Coulomb blockade and quantum ballistic transport, allowed explanation of the observed resistance features of nanodevices. Accumulated experience was used to design semiconductor artificial graphene.",

keywords = "2DEG, 3D-electrostatic potentials, Coulomb blockade, Disorder, Graphene-like superlattice, Nanolithography, Quantum ballistics, Quantum dot, Quantum point contact, Ring interferometer, Simulation, Supercomputer calculation, CONDUCTANCE, RING INTERFEROMETER, DOT, POINT CONTACTS, OSCILLATIONS, SCATTERING",

author = "Tkachenko, {O. A.} and Tkachenko, {V. A.} and Kvon, {Z. D.} and Sheglov, {D. V.} and Aseev, {Alexander L.}",

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Tkachenko, OA, Tkachenko, VA , Kvon, ZD, Sheglov, DV & Aseev, AL 2017, Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures. in AV Latyshev, AV Dvurechenskii & AL Aseev (eds), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc., pp. 131-155. https://doi.org/10.1016/B978-0-12-810512-2.00006-8

Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures. / Tkachenko, O. A.; Tkachenko, V. A.; Kvon, Z. D. et al.

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. ed. / AV Latyshev; AV Dvurechenskii; AL Aseev. Elsevier Science Inc., 2017. p. 131-155.

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

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AU - Tkachenko, O. A.

AU - Tkachenko, V. A.

AU - Kvon, Z. D.

AU - Sheglov, D. V.

AU - Aseev, Alexander L.

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N2 - Various semiconductor devices created by molecular beam epitaxy and lithography were numerically modeled: a quantum point contact in the voltage gate-induced two-dimensional electron gas, a versatile tunable two-terminal quantum dot, a small three-terminal quantum dot, and ring interferometers. Three-dimensional electrostatics calculations, taking into account the design of structures, combined with the theories of Coulomb blockade and quantum ballistic transport, allowed explanation of the observed resistance features of nanodevices. Accumulated experience was used to design semiconductor artificial graphene.

AB - Various semiconductor devices created by molecular beam epitaxy and lithography were numerically modeled: a quantum point contact in the voltage gate-induced two-dimensional electron gas, a versatile tunable two-terminal quantum dot, a small three-terminal quantum dot, and ring interferometers. Three-dimensional electrostatics calculations, taking into account the design of structures, combined with the theories of Coulomb blockade and quantum ballistic transport, allowed explanation of the observed resistance features of nanodevices. Accumulated experience was used to design semiconductor artificial graphene.

KW - 2DEG

KW - 3D-electrostatic potentials

KW - Coulomb blockade

KW - Disorder

KW - Graphene-like superlattice

KW - Nanolithography

KW - Quantum ballistics

KW - Quantum dot

KW - Quantum point contact

KW - Ring interferometer

KW - Simulation

KW - Supercomputer calculation

KW - CONDUCTANCE

KW - RING INTERFEROMETER

KW - DOT

KW - POINT CONTACTS

KW - OSCILLATIONS

KW - SCATTERING

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SN - 9780128105122

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BT - Advances in Semiconductor Nanostructures

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A2 - Dvurechenskii, AV

A2 - Aseev, AL

PB - Elsevier Science Inc.

ER -

Tkachenko OA, Tkachenko VA , Kvon ZD, Sheglov DV, Aseev AL. Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures. In Latyshev AV, Dvurechenskii AV, Aseev AL, editors, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc. 2017. p. 131-155 https://doi.org/10.1016/B978-0-12-810512-2.00006-8

Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

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Keywords

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