Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well

A. S. Yaroshevich, Z. D. Kvon, G. M. Gusev, N. N. Mikhailov

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110–169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.

Original languageEnglish
Pages (from-to)121-125
Number of pages5
JournalJETP Letters
Volume111
Issue number2
DOIs
Publication statusPublished - Jan 2020

Keywords

  • EDGE TRANSPORT

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