Microwave Absorption in 2D Topological Insulators with a Developed Edge States Network

Mahmood M. Mahmoodian, Matvey V. Entin

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A 2D HgTe quantum well is analyzed based on the assumption that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps. The borders between ordinary and topological insulator phases form a network of the edge states covering the entire sample. The optical transitions within the edge states yield a 2D absorption. The qualitative consideration is based on the model of optical intraedge transitions in curved edge states together with percolation arguments.

Original languageEnglish
Article number1800652
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume256
Issue number6
DOIs
Publication statusPublished - 1 Jun 2019

Keywords

  • edge states
  • microwave absorption
  • percolation
  • random two-dimensional topological insulators

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