Microwave Absorption in 2D Topological Insulators with a Developed Edge States Network

Mahmood M. Mahmoodian; Matvey V. Entin

doi:10.1002/pssb.201800652

Microwave Absorption in 2D Topological Insulators with a Developed Edge States Network

Mahmood M. Mahmoodian, Matvey V. Entin

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A 2D HgTe quantum well is analyzed based on the assumption that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps. The borders between ordinary and topological insulator phases form a network of the edge states covering the entire sample. The optical transitions within the edge states yield a 2D absorption. The qualitative consideration is based on the model of optical intraedge transitions in curved edge states together with percolation arguments.

Original language	English
Article number	1800652
Number of pages	5
Journal	Physica Status Solidi (B) Basic Research
Volume	256
Issue number	6
DOIs	https://doi.org/10.1002/pssb.201800652
Publication status	Published - 1 Jun 2019

Keywords

edge states
microwave absorption
percolation
random two-dimensional topological insulators

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10.1002/pssb.201800652

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