Micro-transformer-based integrated digital isolator in 180/90 nm CMOS

Vladimir Butuzov, Alexey Nazarenko, Yuri Bocharov, Oleg Kus, Vitaly Prokopyev, Nikita Dmitriev, Evgeny Smirnov, Tatiana Smirnova, Aleksei Trofimov, Nikolay Salynsky

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

1 Citation (Scopus)

Abstract

An integrated circuit of a digital isolator comprising a transceiver chip implemented in standard 180 nm CMOS process as well as micro-transformers implemented in a special 90 nm technology is presented. The coreless transformer placed on a separate chip has a stacked structure with two adjacent planar copper windings in two layers separated by a silicon dioxide insulator. The transceiver utilizes a pulse edges encoding technique for transmitting signals through the insulation barrier. The proposed digital isolator has a feature in the topology of the elements, which ensures tolerance to the effects of ionizing radiation, as well as the small size of transformers, which makes it possible to create multichannel integrated circuits in small-sized packages. The tested prototype of the digital isolator provided a data transfer rate of more than 30 Mbps. As much as 2.5 kV isolation voltage is achieved between the coils of transformer.

Original languageEnglish
Title of host publication2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings
EditorsO Stukach
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781538651414
DOIs
Publication statusPublished - 1 Apr 2019
Event2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Tomsk, Russian Federation
Duration: 18 Apr 201920 Apr 2019

Publication series

Name2019 International Siberian Conference on Control and Communications, SIBCON 2019 - Proceedings

Conference

Conference2019 International Siberian Conference on Control and Communications, SIBCON 2019
CountryRussian Federation
CityTomsk
Period18.04.201920.04.2019

Keywords

  • CMOS technology
  • Digital isolator
  • Edge encoding
  • On-chip transformer
  • digital isolator
  • edge encoding
  • on-chip transformer

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