Mechanisms for Strong Anisotropy of In-Plane g -Factors in Hole Based Quantum Point Contacts

D. S. Miserev, A. Srinivasan, O. A. Tkachenko, V. A. Tkachenko, I. Farrer, D. A. Ritchie, A. R. Hamilton, O. P. Sushkov

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

In-plane hole g factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contributing to the effect and develop the theory which describes it successfully. We show that there is a new mechanism for the anisotropy related to the existence of an additional B+k-4σ+ effective Zeeman interaction for holes, which is kinematically different from the standard single Zeeman term B-k-2σ+ considered until now.

Original languageEnglish
Article number116803
Number of pages5
JournalPhysical Review Letters
Volume119
Issue number11
DOIs
Publication statusPublished - 12 Sep 2017

Keywords

  • 2-DIMENSIONAL ELECTRON-GAS
  • QUANTIZED CONDUCTANCE
  • SEMICONDUCTORS
  • CONSTRICTION
  • TRANSPORT
  • STATES

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