Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon

Damir R. Islamov, V. A. Gritsenko, T. V. Perevalov, O. M. Orlov, G. Ya Krasnikov

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We study the charge transport mechanism of electron via traps in thermal SiO2 on silicon. Electron transport is limited by phonon-assisted tunnelling between traps. Charge flowing leads to oxygen vacancies generation, and the leakage current increases. Long-time annealing at high temperatures decreased the leakage current to initial values due to oxygen vacancies recombination with interstitial oxygen. Taking into account results of ab initio simulations, we found that the oxygen vacancies act as electron traps in SiO2.

Original languageEnglish
Article number012003
Number of pages4
JournalJournal of Physics: Conference Series
Volume864
Issue number1
DOIs
Publication statusPublished - 15 Aug 2017

Keywords

  • ELECTRONS
  • FILM

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