Luminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions

S. G. Cherkova, V. A. Volodin, V. A. Skuratov, M. Stoffel, H. Rinnert, M. Vergnat

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Abstract

The luminescent and structural properties of GeO x thin films and GeO/SiO 2 multilayer heterostructures, irradiated with 167 MeV Xe ions with fluencies up to 10 13 cm -2 , were studied. We report strong photoluminescence in visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. And infrared luminescence bands (from ∼0.8 eV to ∼1.2 eV) were observed in as-deposited and irradiated structures, which can be related to defects or defects complexes in Ge x Si y O 2 glass and partially in Si substrate. It was shown that swift heavy ion irradiation does not lead to the expected phase separation of germanium suboxide into germanium nanoclusters and GeO 2 , but causes the intermixing of GeO/SiO 2 layers with the formation of Ge-O-Si bonds.

Original languageEnglish
Title of host publicationInternational Conference on Micro- and Nano-Electronics 2018
EditorsVladimir F. Lukichev, Konstantin V. Rudenko
PublisherSPIE
Number of pages8
Volume11022
ISBN (Electronic)9781510627093
DOIs
Publication statusPublished - 1 Jan 2019
EventInternational Conference on Micro- and Nano-Electronics 2018, ICMNE 2018 - Zvenigorod, Russian Federation
Duration: 1 Oct 20185 Oct 2018

Publication series

NameProceedings of SPIE
PublisherSPIE-INT SOC OPTICAL ENGINEERING
Volume11022
ISSN (Print)0277-786X

Conference

ConferenceInternational Conference on Micro- and Nano-Electronics 2018, ICMNE 2018
CountryRussian Federation
CityZvenigorod
Period01.10.201805.10.2018

Keywords

  • photoluminescence
  • Si Ge O compounds
  • structural defect
  • swift heavy ions
  • IRRADIATION
  • PHOTOLUMINESCENCE
  • BLUE
  • NANOCRYSTALS
  • DEFECT
  • OPTICAL-PROPERTIES
  • OXIDES
  • SixGeyOz compounds

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